A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes

AbstractWe present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations

Impact ionization processes in the steady state of a driven Mott insulating layer coupled to metallic leads

We study a simple model of photovoltaic energy harvesting across a Mott insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. Upon driving the layer with a time periodic electric field a particle current is induced from the low-energy to the high-energy lead. We address in particular the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet-DMFT treatment with the so-called auxiliary master equation approach as impurity solver. We verify that an approximation, whereby the self-energy is taken diagonal in the Floquet indices, is appropriate for the parameter range we are considering.Comment: 11 pages, 8 figures. Comments and suggestions welcome